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ACE25C800G uniform sector dual and quad serial flash ver 1. 6 1 description the ace25c 800 g ( 8 m - bit) serial flash supports the standard serial peripheral interface (spi), and supports the dual/quad spi: serial clock, chip select, serial data i/o0 (si),i/o1 (so), i/o2 (wp#), and i/o3 (hold#). the dual i/o data is transf erred with speed of 240mbits/s and the quad i/o & quad output data is transferred with speed of 4 32 mbits/s. features ? 8 m - bit serial flash - 1024 k - byte - 256 bytes per programmable page ? standard, dual, quad spi - standard spi: sclk, cs#, si, so, wp#, hold# - d ual spi: sclk, cs#, io0, io1, wp#, hold# - quad spi: sclk, cs#, io0, io1, io2, io3 ? high speed clock frequency - 1 08 mhz for fast read with load - dual i/o data transfer up to 2 16 mbits/s - quad i/o data transfer up to 4 32 mbits/s ? software/hardware write protect ion - write protect all/portion of memory via software - enable/disable protection with wp# pin - top or bottom, sector or block selection ? minimum 100,000 program/erase cycles ? program/erase speed - page program time: 0.7ms typical - sector erase time: 100ms typ ical - block erase time: 0. 2 /0. 4 s typical - chip erase time: 7 s typical ? flexible architecture - sector of 4k - byte - block of 32/64k - byte ? low power consumption - 20ma maximum active current - 5ua maximum power down current ? advanced security features(1) - 3*256 - byt e security registers with otp lock ? voltage, temperature range - full voltage range: 2.7~3.6v - 40 to 85 operating range
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 2 packaging type dip - 8 / sop - 8 / sop - 8 (208mil) pin configurations pin no pin name i/o function 1 cs# i chip select input 2 so (io1) i/o data output (data input output 1) 3 w p# (io2) i/o write protect input (data input output 2) 4 vss ground 5 si (io0) i/o data input (data input output 0) 6 sclk i serial clock input 7 hold# (io3) i/o hold input (data input output 3) 8 vcc power supply memory organization each dev i ce h as each b l ock has each s ec t or has each page has 1m 64/32k 4k 256 bytes 4k 256/128k 16 - pages 256 16/8 - - sectors 16/32 - - - blocks
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 3 block diagram
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 4 ordering information ACE25C800G xx + x h - x u niform b lock s ector a rchitecture ace25c 800 g 64k bytes block sector architecture block sector address range 15 255 0 f f 000h 0 f ffffh ? . ? . ? . 240 0 f 0000h 0 f 0fffh 14 239 0 ef 000h 0 e ffffh ? . ? . ? . 224 0 e 0000h 0 e 0fffh ? . ? . ? . ? . ? . ? . ? . ? . ? . ? . ? . ? . ? . ? . ? . ? . ? . 2 47 02f000h 02ffffh ? . ? . ? . 32 020000h 020fffh 1 31 01f000h 01ffffh ? . ? . ? . 16 010000h 010fffh 0 15 00f000h 00ffffh ? . ? . ? . 0 000000h 000fffh u: tube t: tape and reel pb - free dp: dip - 8 fm: sop - 8 fml: sop - 8 (2 08mil) halogen - free null : commercial (0~70 ) i: industrial ( - 40~85 )
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 5 d evice o peration spi mode standard spi the ace25c 800 g features a serial peripheral interface on 4 signals bus: serial clock (sclk), chip select (cs#), serial data input (si) and serial data output (so). both spi bus mode 0 and 3 are supported. input data is latched on the rising edge of sc lk and data shifts out on the falling edge of sclk. dual spi the ace25c 800 g supports dual spi operation when using the ?dual output fast read? and ?dual i/o fast read? (3bh and bbh) commands. these commands allow data to be transferred to or from the devic e at two times the rate of the standard spi. when using the dual spi command the si and so pins become bidirectional i/o pins: io0 and io1. quad spi the ace25c 800 g supports quad spi operation when using the ?quad output fast read?,? quad i/o fast read?, ?q uad i/o word fast read? (6bh, ebh, e7h) commands. these commands allow data to be transferred to or from the device at four times the rate of the standard spi. when using the quad spi command the si and so pins become bidirectional i/o pins: io0 and io1, a nd wp# and hold# pins become io2 and io3. quad spi commands require the non - volatile quad enable bit (qe) in status register to be set. hold the hold# signal goes low to stop any serial communications with the device, but doesn?t stop the operation of writ e status register, programming, or erasing in progress. the operation of hold, need cs# keep low, and starts on falling edge of the hold# signal, with sclk signal being low (if sclk is not being low, hold operation will not start until sclk being low). the hold condition ends on rising edge of hold# signal with sclk being low (if sclk is not being low, hold operation will not end until sclk being low). the so is high impedance, both si and sclk don?t care during the hold operation, if cs# drives high during hold operation, it will reset the internal logic of the device. to re - start communication with chip, the hold# must be at high and then cs# must be at low. figure1. hold condition
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 6 data protection the ace25c 800 g provide the following data p rotection methods: ? write enable (wren) command: the wren command is set the write enable latch bit (wel). the wel bit will return to reset by the following situation: - power - up - write disable (wrdi) - write status register(wrsr) - page program (pp) - sector e rase (se) / block erase (be) / chip erase (ce) ? software protection mode: the block protect (sec, tb, bp2, bp1, bp0) bits define the section of the memory array that can be read but not change. ? hardware protection mode: wp# going low to protected the bp0~s ec bits and srp0~1 bits. ? deep power - down mode: in deep power - down mode, all commands are ignored except the release from deep power - down mode command. table1.0 ace25c 800g protected area size (cmp=0) status register content memory content sec tb bp2 bp1 b p0 blocks addresses density portion x x 0 0 0 none none none none 0 0 0 0 1 15 0 f 0000h - 0 f ffffh 64kb upper 1/ 16 0 0 0 1 0 14 to 15 0 e 0000h - 0 f ffffh 128kb upper 1/ 8 0 0 0 1 1 12 to 15 0 c 00 00h - 0 f ffffh 256kb upper 1/ 4 0 0 1 0 0 8 to 15 0 8 0000h - 0 f ffffh 512k b upper 1/ 2 0 1 0 0 1 0 000000h - 0 0 ffffh 64 kb lower 1/ 16 0 1 0 1 0 0 to 1 000000h - 0 1 ffffh 128kb lower 1/ 8 0 1 0 1 1 0 to 3 000000h - 0 3 ffffh 256 kb lower 1/ 4 0 1 1 0 0 0 to 7 0 00 000h - 07ffffh 512kb lower 1/ 2 0 x 1 0 1 0 to 15 0 00 000h - 0 f ffffh 1m all x x 1 1 x 0 to15 000 000h - 0 f ffffh 1 m all 1 0 0 0 1 15 0 ff 000h - 0 f ffffh 4 kb top block 1 0 0 1 0 15 0 fe 000h - 0 f ffffh 8 kb top block 1 0 0 1 1 15 0 fc 000h - 0 ff fffh 16 kb top block 1 0 1 0 x 15 0 f8 000h - 0 ff fffh 32kb top block 1 1 0 0 1 0 000000h - 00 0 fffh 4 kb bottom bloc k 1 1 0 1 0 0 000000h - 00 1 fffh 8 kb bottom block 1 1 0 1 1 0 000000h - 00 3 fffh 16 kb bottom block 1 1 1 0 x 0 000000h - 0 07 fffh 32kb bottom block
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 7 table1. 1 ace25c 800g protected area size (cmp= 1 ) status register content memory content sec tb bp2 bp1 bp0 b locks addresses density portion x x 0 0 0 0 to 15 000000h - 1f ffffh 1m all 0 0 0 0 1 0 to 14 000000h - 0e ffffh 960 kb lower 1 5 / 16 0 0 0 1 0 0 to 13 000000h - 0 d ffffh 896kb lower 1 7 / 8 0 0 0 1 1 0 to 11 000000h - 1b ffffh 768kb lower 3/4 0 0 1 0 0 0 to 7 0 0 0000h - 07ffffh 512kb lower 1/ 2 0 1 0 0 1 1 to 15 0 1 0000h - 0 f ffffh 960kb upper 15 / 16 0 1 0 1 0 2 to 15 0 2 00 00h - 0 f ffffh 896 kb upper 7 / 8 0 1 0 1 1 4 to 15 0 400 00h - 0 f ffffh 768kb upper 3 / 4 0 1 1 0 0 8 to 15 0 800 00h - 0 f ffffh 512kb upper 1/2 0 x 1 0 1 none none none none x x 1 1 x none none none none 1 0 0 0 1 0 to 15 000000h - 0 fe fffh 1020 kb l - 255/256 1 0 0 1 0 0 to 15 000000h - 0 fd fffh 1016 kb l - 127 / 128 1 0 0 1 1 0 to 15 000 000h - 0 fb fffh 1008 kb l - 63 / 64 1 0 1 0 x 0 to 15 000 000h - 0 f7f ffh 992kb l - 31 / 32 1 1 0 0 1 0 to 1 5 00 100 0h - 0 f ffffh 1020 kb u - 255/256 1 1 0 1 0 0 to 15 002 000h - 0 f ffffh 1016 kb u - 127 / 128 1 1 0 1 1 0 to 15 004 000h - 0 f ffffh 1008 kb u - 63 / 64 1 1 1 0 x 0 to 15 008 000h - 0 f ffffh 992kb u - 31 / 32 status register s 15 s 14 s 13 s 12 s 11 s 10 s 9 s8 sus cmp lb3 lb2 lb1 r eserved qe srp1 s7 s6 s5 s4 s3 s2 s1 s0 srp0 sec tb bp2 bp1 bp0 wel w1p the status and control bits of the status register are as follows: wip bit the write in progress (wip) bit indicates whether the memory is busy in program/erase/write status regis ter progress. when wip bit sets to 1, means the device is busy in program/erase/write status register progress, when wip bit sets 0, means the device is not in program/erase/write status register progress.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 8 wel bit the write enable latch (wel) bit indi cates the status of the internal write enable latch. when set to 1 the internal write enable latch is set, when set to 0 the internal write enable latch is reset and no write status register, program or erase command is accepted. sec, tb, bp2, bp1, bp0 bit s the block protect (sec, tb, bp2, bp1, bp0) bits are non - volatile. they define the size of the area to be software protected against program and erase commands. these bits are written with the write status register (wrsr) command. when the block protect ( sec, tb, bp2, bp1, bp0) bits are set to 1, the relevant memory area (as defined in table1).becomes protected against page program (pp), sector erase (se) and block erase (be) commands. the block protect (sec, tb, bp2, bp1, bp0) bits can be written provided that the hardware protected mode has not been set. the chip erase (ce) command is executed, if the block protect (bp2, bp1, bp0) bits are ?000? when cmp=0, or ?110/111? when cmp=1. srp1, srp0 bits. the status register protect (srp1 and srp0) bits are non - volatile read/write bits in the status register. the srp bits control the method of write protection: software protection, hardware protection, power supply lock - down or one time programmable protection. srp1 srp0 #wp status register description 0 0 x sof t w a r e p r o t ec t ed the s t a t us r egi st er can b e writt en t o a ft er a w rit e en a b l e co m m and, we l = 1. (d e f au lt ) 0 1 0 h a r d w a r e p r o t ec t ed w p # = 0, t he s t a t us r e g i s t er l ocked a nd c a n not be writt en t o 0 1 1 h a r d w a r e u np r o t ec t ed w p # = 1, t he s t a t us r eg i st er i s unl ocked and c a n be w r itt en t o a ft er a w rit e enab l e c o mm a nd, w e l = 1 1 0 x po w er su p p l y l oc k - d o w n ( 1) s t a t us reg i st er i s p r o t ec t e d and c a n not be writt en t o aga i n un ti l t he next p o w er - d o w n, po w e r - u p c y c l e 1 1 x o ne ti m e p r og r am ( 2) s t a t us reg i st er i s pe r m ane n t l y p r o t ec t ed and can not be writt en t o n ote : 1. when srp1, srp0= (1, 0), a power - down, power - up cycl e will change srp1, srp0 to (0, 0) state. 2. 2t he one time program feature is available upon special order. please contact ace for details. qe bit. the quad e nable (qe) bit is a non - volatile read/write bit in the status register that allows quad operation. when the qe bit is set to 0 (default) the wp# pin and hold# pin are enable. when the qe pin is set to 1, the quad io2 and io3 pins are enabled. (the qe bit s hould never be set to 1 during standard spi or dual spi operation if the wp# or hold# pins are tied directly to the power supply or ground) l b3/lb2/lb1 bit. the lb bit is a non - volatile one time program (otp) bit in status register (s10) that provide the w rite protect control and status to the security registers. the default state of lb is 0, the security registers are unlocked. lb can be set to 1 individually using the write register instruction. lb is one time programmable, once it?s set to 1, the securit y registers will become read - only permanently. lb0 is reserved, lb3/2/1 for security registers 3:1.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 9 cmp bit the cmp bit is a non - volatile read/write bit in the status register (s14). it is used in conjunction the sec - bp0 bits to provide more flexibility f or the array protection. please see the status registers memory protection table for details. the default setting is cmp=0. sus bit the sus bit is a read only bit in the status register (s15 ) that is set to 1 after executing an erase/program suspend (75h) command. the sus bit is cleared to 0 by erase/program resume (7ah) command as well as a power - down, power - up cycle. c ommands d escription all commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first rising edge of sclk after cs# is driven low. then, the one - byte command code must be shifted in to the device, most significant bit first on si, each bit being latched on the rising edges of sclk. see table2, every command sequence starts with a one - byte command code. depending on the command, this might be followed by address bytes, or by data bytes, or by both or none. cs# must be driven high after the last bit of the command sequence has been shifted in. for the command of read, fast read, read st atus register or release from deep power - down, and read device id, the shifted - in command sequence is followed by a data - out sequence. cs# can be driven high after any bit of the data - out sequence is being shifted out. for the command of page program, sect or erase, block erase, chip erase, write status register, write enable, write disable or deep power - down command, cs# must be driven high exactly at a byte boundary, otherwise the command is rejected, and is not executed. that is cs# must driven high when the number of clock pulses after cs# being driven low is an exact multiple of eight. for page program, if at any time the input byte is not a full byte, nothing will happen and wel will not be reset.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 10 table2. commands command name byte 1 byte 2 byte 3 byte 4 byte 5 byte 6 n - bytes write enable 06h write disable 04h read status register 05h (s7 - s0) (continuous) read status register - 1 35h (s15 - s8) (continuous) write enable for volatile status register 50h writ e status register 01h (s7 - s0) read data 03h a23 - a16 a15 - a8 a7 - a0 (d7 - d0) (next byte) (continuous) fast read 0bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0) (continuous) dual output fast read 3bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0)(1) (continuous) dual i/o f ast read bbh a23 - a8(2) a7 - a0 m7 - m0(2) (d7 - d0)( 1 ) (continuous) quad output fast read 6bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0)(3) (continuous) quad i/o fast read ebh a23 - a0 m7 - m0(4) d ummy(5) (d7 - d0)(3) (continuous) continuous read reset ffh page program 02h a23 - a16 a15 - a8 a7 - a0 (d7 - d0) next byte sector erase 20h a23 - a16 a15 - a8 a7 - a0 block erase (32k) 52h a23 - a16 a15 - a8 a7 - a0 block erase (64k) d8h a23 - a16 a15 - a8 a7 - a0 chip erase c7/60h program/erase suspend 75h program/ erase resume 7ah deep power - down b9h release from deep power - down, and read device id abh dummy dummy dummy (id7 - id0) (continuous) release from deep power - down abh manufacturer/device id 90h dummy dummy 00h (m7 - m0) (id7 - id0) (continu ous) read identification 9fh (m7 - m0) (id15 - id8) (id7 - id0) (continuous) erase security registers (8) 44h a23 - a16 a15 - a8 a7 - a0 program security registers (8) 42h a23 - a16 a15 - a8 a7 - a0 (d7 - d0) (d7 - d0) read security registers (8) 48h a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0)
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 11 n ote : 1. dual output data io0 = (d6, d4, d2, d0) io1 = (d7, d5, d3, d1) 2. dual input address io0 = a22, a20, a18, a16, a14, a12, a10, a8, a6, a4, a2, a0, m6, m4, m2, m0 io1 = a23, a21, a19, a17, a15, a13, a11, a9, a7, a5, a3, a1, m 7, m5, m3, m1 3.quad output data io0 = (d4, d0, ?..) io1 = (d5, d1, ?..) io2 = (d6, d2, ?..) io3 = (d7, d3,?..) 4. quad input address io0 = a20, a16, a12, a8, a4, a0, m4, m0 io1 = a21, a17, a13, a9, a5, a1, m5, m1 io2 = a22, a18, a14, a10, a6, a2, m6, m2 io3 = a23, a19, a15, a11, a7, a3, m7, m3 5. fast read quad i/o data io0 = (x, x, x, x, d4, d0,?) io1 = (x, x, x, x, d5, d1,?) io2 = (x, x, x, x, d6, d2,?) io3 = (x, x, x, x, d7, d3,?) 6 . security registers address: security register: a23 - a16=00000000b, a15 - a10=0000b, a9 - a0= address; table of id definitions ace25c 800 g operation code m7 - m0 id15 - id8 id7 - id0 9fh e0 40 14 90h e0 1 3 abh 1 3
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 12 write enable (wren) (06h) the write enable (wren) command is for setting the write enable latch (w el) bit. the write enable latch (wel) bit must be set prior to every page program (pp), sector erase (se), block erase (be), chip erase (ce) and write status register (wrsr) command. the write enable (wren) command sequence: cs# goes low sending the write enable command cs# goes high. figure2. write enable sequence diagram write disable (wrdi)(04h) the write disable command is for resetting the write enable latch (wel) bit. the write disable command sequence: cs# goes low sending the write disable command cs# goes high. the wel bit is reset by following condition: power - up and upon completion of the write status register, page program, sector erase, block erase and chip erase commands. figure3. write disable sequence diagram read status re gister (rdsr) (05h or 35h) the read status register (rdsr) command is for reading the status register. the status register may be read at any time, even while a program, erase or write status register cycle is in progress. when one of these cycles is in pr ogress, it is recommended to check the write in progress (wip) bit before sending a new command to the device. it is also possible to read the status register continuously. for command code ?05h?, the so will output status register bits s7~s0. the command code ?35h?, the so will output status register bits s15~s8. figure4. read status register sequence diagram
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 13 write status register (wrsr) (01h) the write status register (wrsr) command allows new values to be written to the status register. before it can be accepted, a write enable (wren) command must previously have been executed. after the write enable (wren) command has been decoded and executed, the device sets the write enable latch (wel). the write status register (wrsr) command has no effect on s15, s1 and s0 of the status register. cs# must be driven high after the eighth or sixteen bit of the data byte has been latched in. if not, the write status register (wrsr) command is not executed. if cs# is driven high after eighth bit of the data byt e, the cmp and qe and srp1 bits will be cleared to 0. as soon as cs# is driven high, the self - timed write status register cycle (whose duration is tw) is initiated. while the write status register cycle is in progress, the status register may still be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self - timed write status register cycle, and is 0 when it is completed. when the cycle is completed, the write enable latch (wel) is reset. the write sta tus register (wrsr) command allows the user to change the values of the block protect (sec, tb, bp2, bp1, bp0) bits, to define the size of the area that is to be treated as read - only, as defined in table1. the write status register (wrsr) command also allo ws the user to set or reset the status register protect (srp1 and srp0) bits in accordance with the write protect (wp#) signal. the status register protect (srp1 and srp0) bits and write protect (wp#) signal allow the device to be put in the hardware prote cted mode. the write status register (wrsr) command is not executed once the hardware protected mode is entered. figure5. write status register sequence diagram read data bytes (read) (03h) the read data bytes (read) command is followed by a 3 - by te address (a23 - a0), each bit being latched - in during the rising edge of sclk. then the memory content, at that address, is shifted out on so, each bit being shifted out, at a max frequency fr, during the falling edge of sclk. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single read data bytes (read) command. any read data bytes (read) command, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 14 figure6. read data bytes sequence diagram read data bytes at higher speed (fast read) ( 0bh) the read d ata bytes at higher speed (fast read) command is for quickly reading data out. it is followed by a 3 - byte address (a23 - a0) and a dummy byte, each bit being latched - in during the rising edge of sclk. then the memory content, at that address, is shifted out on so, each bit being shifted out, at a max frequency fc, during the falling edge of sclk. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out . figure7 . read data bytes at higher speed sequence diagram dual output fast read (3bh) the dual output fast read command is followed by 3 - byte address (a23 - a0) and a dummy byte, each bit being latched in during the rising edge of sclk, then the m emory contents are shifted out 2 - bit per clock cycle from si and so. the command sequence is shown in followed figure8. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 15 figure8. dual output fast read sequence diagram quad output fast read (6bh) the quad output fast read command is followed by 3 - byte address (a23 - a0) and a dummy byte, each bit being latched in during the rising ed ge of sclk, then the memory contents are shifted out 4 - bit per clock cycle from io3, io2, io1 and io0. the command sequence is shown in followed figure9. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. figure9. quad output fast read sequence diagram
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 16 dual i/o fast read (bbh) the dual i/o fast read command is similar to the dual output fast read command but with the capability to input the 3 - byte address (a23 - 0) and a ?continuous read mode? byte 2 - bit per clock by si and so, each bit being latched in during the rising edge of sclk, then the memory contents are shifted out 2 - bit per clock cycle from si and so. the command sequence is shown in followed figure10. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. dual i/o fast read with ?continuous read mode? the dual i/o fast re ad command can further reduce command overhead through setting the ?continuous read mode? bits (m7 - 0) after the input 3 - byte address (a23 - a0). if the ?continuous read mode? bits (m7 - 0) =axh, then the next dual i/o fast read command (after cs# is raised and then lowered) does not require the bbh command code. the command sequence is shown in followed figure11. if the ?continuous read mode? bits (m7 - 0) are any value other than axh, the next command requires the first bbh command code, thus returning to normal operation. a ?continuous read mode? reset command can be used to reset (m7 - 0) before issuing normal command. figure10. dual i/o fast read sequence diagram (m7 - 0= 0xh or not axh)
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 17 figure11. dual i/o fast read sequence diagram (m 7 - 0= axh) quad i/o fast read (ebh) the quad i/o fast read command is similar to the dual i/o fast read command but with the capability to input the 3 - byte address (a23 - 0) and a ?continuous read mode? byte and 4 - dummy clock 4 - bit per clo ck by io0, io1, io3, io4, each bit being latched in during the rising edge of sclk, then the memory contents are shifted out 4 - bit per clock cycle from io0, io1, io2, io3. the command sequence is shown in followed figure12. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the quad enable bit (qe) of status register (s9) must be set to enable for the quad i/o fast read command. quad i/o fast read with ?continuous read mode? the quad i/o fast read command can further reduce command overhead through setting the ?continuous read mode? bits (m7 - 0) after the input 3 - byte address (a23 - a0). if the ?continuous read mode? bits (m7 - 0) =axh, then the next quad i/ o fast read command (after cs# is raised and then lowered) does not require the ebh command code. the command sequence is shown in followed figure13. if the ?continuous read mode? bits (m7 - 0) are any value other than axh, the next command requires the firs t ebh command code, thus returning to normal operation. a ?continuous read mode? reset command can be used to reset (m7 - 0) before issuing normal command.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 18 figure12. quad i/o fast read sequence diagram (m7 - 0= 0xh or not axh) figure13. quad i/o fast read sequence diagram (m7- 0= axh)
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 19 page program (pp) (02h) the page program (pp) command is for programming the memory. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit before sending the page program command. the page program (pp) command is entered by driving cs# low, followed by the command code, three address bytes and at least one data byte on si. if the 8 least significant ad dress bits (a7 - a0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (a7 - a0) are all zero). cs# must be driven low for the entire duration of the sequence. the page program command sequence: cs# goes low sending page program command 3 - byte address on si at least 1 byte data on si cs# goes high. the command sequence is shown in figure1 4 . if more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. if less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without h aving any effects on the other bytes of the same page. cs# must be driven high after the eighth bit of the last data byte has been latched in; otherwise the page program (pp) command is not executed. as soon as cs# is driven high, the self - timed page progr am cycle (whose duration is tpp) is initiated. while the page program cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self - timed page program cycle , and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a page program (pp) command applied to a page which is protected by the block protect (sec, tb, bp2, bp1,bp0) is not execute d. figure 1 4 . page program sequence diagram
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 20 sector erase (se) (20h) the sector erase (se) command is for erasing the all data of the chosen sector. a write enable (wren) command must previously have been executed to set the write enab le latch (wel) bit. the sector erase (se) command is entered by driving cs# low, followed by the command code, and 3 - address byte on si. any address inside the sector is a valid address for the sector erase (se) command. cs# must be driven low for the enti re duration of the sequence. the sector erase command sequence: cs# goes low sending sector erase command 3 - byte address on si cs# goes high. the command sequence is shown in figure1 5 . cs# must be driven high after the eighth bit of the last address byte h as been latched in; otherwise the sector erase (se) command is not executed. as soon as cs# is driven high, the self - timed sector erase cycle (whose duration is tse) is initiated. while the sector erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self - timed sector erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit i s reset. a sector erase (se) command applied to a sector which is protected by the block protect (sec, tb, bp2, bp1, bp0) bit (see table1.0&1.1) is not executed. figure1 5 . sector erase sequence diagram 32kb block erase (be) (52h) the 32kb block er ase (be) command is for erasing the all data of the chosen block. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit. the 32kb block erase (be) command is entered by driving cs# low, followed by the com mand code, and three address bytes on si. any address inside the block is a valid address for the 32kb block erase (be) command. cs# must be driven low for the entire duration of the sequence. the 32kb block erase command sequence: cs# goes low sending 32k b block erase command ? 3 - byte address on si cs# goes high. the command sequence is shown in figure1 6 . cs# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 32kb block erase (be) command is not executed. as soon as cs# is driven high, the self - timed block erase cycle (whose duration is tbe) is initiated. while the block erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self - timed block erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a 32kb block erase (be) command applied to a block which is protected by the block protect (sec, tb, bp2, bp1, bp0) bits (see table1.0&1.1) is not executed.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 21 figure 1 6 . 32kb block erase sequence diagram 64kb block erase (be) (d8h) the 64kb block erase (be) command is for erasing the all data of the chosen block. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit. the 64kb block erase (be) command is entered by driving cs# low, followed by the command code, and three address bytes on si. any address inside the b lock is a valid address for the 64kb block erase (be) command. cs# must be driven low for the entire duration of the sequence. the 64kb block erase command sequence: cs# goes low sending 64kb block erase command 3 - byte address on si cs# goes high. the c ommand sequence is shown in figure 17 . cs# must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 64kb block erase (be) command is not executed. as soon as cs# is driven high, the self - timed block erase cycle (w hose duration is tbe) is initiated. while the block erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self - timed block erase cycle, and is 0 wh en it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a 64kb block erase (be) command applied to a block which is protected by the block protect (sec, tb, bp2, bp1, bp0) bits (see table1.0&1. 1) is not executed. figure 17 . 64kb block erase sequence diagram
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 22 chip erase (ce) (60/c7h) the chip erase (ce) command is for erasing the all data of the chip. a write enable (wren) command must previously have been executed to set the wr ite enable latch (wel) bit .the chip erase (ce) command is entered by driving cs# low, followed by the command code on serial data input (si). cs# must be driven low for the entire duration of the sequence. the chip erase command sequence: cs# goes low sen ding chip erase command cs# goes high. the command sequence is shown in figure 18 . cs# must be driven high after the eighth bit of the command code has been latched in, otherwise the chip erase command is not executed. as soon as cs# is driven high, the se lf - timed chip erase cycle (whose duration is tce) is initiated. while the chip erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self - timed chi p erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. the chip erase (ce) command is executed only if the block protect (bp2, bp1, bp0) bits are ?000? when cmp=0, or ?110/111? when cmp=1. the chip erase (ce) command is ignored if one or more sectors are protected. figure 18 . chip erase sequence diagram deep power - down (dp) (b9h) executing the deep power - down (dp) command is the only way to put the device in the lowest consumption mode (the deep power - down mode). it can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all write, program and erase commands. driving cs# high desele cts the device, and puts the device in the standby mode (if there is no internal cycle currently in progress). but this mode is not the deep power - down mode. the deep power - down mode can only be entered by executing the deep power - down (dp) command. once t he device has entered the deep power - down mode, all commands are ignored except the release from deep power - down and read device id (rdi) command. this releases the device from this mode. the release from deep power - down and read device id (rdi) command al so allows the device id of the device to be output on so. the deep power - down mode automatically stops at power - down, and the device always power - up in the standby mode. the deep power - down (dp) command is entered by driving cs# low, followed by the comman d code on si. cs# must be driven low for the entire duration of the sequence.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 23 the deep power - down command sequence: cs# goes low sending deep power - down command cs# goes high. the command sequence is shown in figure 19 . cs# must be driven high after the eighth bit of the command code has been latched in; otherwise the deep power - down (dp) command is not executed. as soon as cs# is driven high, it requires a delay of tdp before the supply current is reduced to icc2 and the deep power - down mode is ent ered. any deep power - down (dp) command, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. figure 19 . deep power - down sequence diagram release from deep power - down and rea d device id (rdi) (abh) the release from power - down or device id command is a multi - purpose command. it can be used to release the device from the power - down state or obtain the devices electronic identification (id) number. to release the device from the power - down state, the command is issued by driving the cs# pin low, shifting the instruction code ?abh? and driving cs# high as shown in figure2 0 . release from power - down will take the time duration of tres1 (see ac characteristics) before the device will resume normal operation and other command are accepted. the cs# pin must remain high during the tres1 time duration. when used only to obtain the device id while not in the power - down state, the command is initiated by driving the cs# pin low and shifting the instruction code ?abh? followed by 3 - dummy byte. the device id bits are then shifted out on the falling edge of sclk with most significant bit (msb) first as shown in figure2 0 . the device id value for the ace25c 800 g is listed in manufacturer and device identification table. the device id can be read continuously. the command is completed by driving cs# high. when used to release the device from the power - down state and obtain the device id, the command is the same as previously described, and shown in f igure2 0 , except that after cs# is driven high it must remain high for a time duration of tres2 (see ac characteristics). after this time duration the device will resume normal operation and other command will be accepted. if the release from power - down / d evice id command is issued while an erase, program or write cycle is in process (when wip equal 1) the command is ignored and will not have any effects on the current cycle.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 24 figure 2 0 . release power - down sequence diagram figur e21 . release power - down/read device id sequence diagram read manufacture id/ device id (rems) (90h) the read manufacturer/device id command is an alternative to the release from power - down/ device id command that provides both the jedec assig ned manufacturer id and the specific device id. the command is initiated by driving the cs# pin low and shifting the command code ?90h? followed by a 24 - bit address (a23 - a0) of 000000h. after which, the manufacturer id and the device id are shifted out on the falling edge of sclk with most significant bit (msb) first as shown in figure2 2 . if the 24 - bit address is initially set to 00000 1 h, the device id will be read first. figure 22 . read manufacture id/ device id sequence diagram
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 25 read identification (rdid) (9fh) the read identification (rdid) command allows the 8 - bit manufacturer identification to be read, followed by two bytes of device identification. the device identification indicates the memory type in the first byte, and the memory capacity of the device in the second byte. any read identification (rdid) command while an erase or program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. the read identification (rdid) command should not be issued while the device is in deep power - down mode. the device is first selected by driving cs# to low. then, the 8 - bit command code for the command is shifted in. this is followed by the 24 - bit device identification, stored in the memory, being shi fted out on serial data output, each bit being shifted out during the falling edge of serial clock. the command sequence is shown in figure2 3 . the read identification (rdid) command is terminated by driving cs# to high at any time during data output. when cs# is driven high, the device is put in the standby mode. once in the standby mode, the device waits to be selected, so that it can receive, decode and execute commands. figure 2 3 . read identification id sequence diagram continuous read mode reset (crmr) (ffh) the dual/quad i/o fast read operations, ?continuous read mode? bits (m7 - 0) are implemented to further reduce command overhead. by setting the (m7 - 0) to axh, the next dual/quad i/o fast read operations do not require the bbh/ebh/e7h command code. because the ace25c 800 g has no hardware reset pin, so if continuous read mode bits are set to ?axh?, the ace25c 800 g will not recognize any standard spi commands. so continuous read mode reset command will release the continuous read mode from the ?axh? state and allow standard spi command to be recognized. the command sequence is show in figure 24 .
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 26 figure 24 . continuous read mode reset sequence diagra m erase security registers (44h) the ace25c 800 g provides four 256 - byte secur ity registers which can be erased and programmed individually. these registers may be used by the system manufacturers to store security and other important information separately from the main memory array. the erase security registers command is similar to sector/block erase command. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit. the erase security registers command sequence: cs# goes low sending erase security registers command cs# goes high. the command sequence is shown in figure33. cs# must be driven high after the eighth bit of the command code has been latched in otherwise the erase security registers command is not executed. as soon as cs# is driven high, the self - timed erase security regist ers cycle (whose duration is tse) is initiated. while the erase security registers cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self - timed erase security registers cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. the security registers lock bit (lb) in the status register can be used to otp protect the security registers. once the lb bit is set to 1, the security registers will be permanently locked; the erase security registers command will be ignored. address a23 - a16 a15 - a 8 a 7 - a0 security registers 1 00h 01h don ? t care security registers 2 00h 02h don ? t car e security registers 3 00h 03h don ? t care
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 27 figure 33. erase security registers command sequence diagram program security registers (42h) the program security registers command is similar to the page program command. it allows from 1 to 256 bytes security registers data to be programmed. a write enable (wren) command must previously have been executed to set the write enable latch (wel) bit before sending the program security registers command. the program security registers command is enter ed by driving cs# low, followed by the command code (42h), three address bytes and at least one data byte on si. as soon as cs# is driven high, the self - timed program security registers cycle (whose duration is tpp) is initiated. while the program security registers cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self - timed program security registers cycle, and is 0 when it is completed. at some unsp ecified time before the cycle is completed, the write enable latch (wel) bit is reset. if the security registers lock bit (lb3/lb2/lb1) is set to 1, the security registers will be permanently locked. program security registers command will be ignored. addr ess a23 - a16 a15 - a8 a7 - a0 security registers 1 00h 01h byte address security registers 2 00h 02h byte address security registers 3 00h 03h byte address figure 25 . program security registers command sequence diagram
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 28 read security registe rs (48h) the read security registers command is similar to fast read command. the command is followed by a 3 - byte address (a23 - a0) and a dummy byte, each bit being latched - in during the rising edge of sclk. then the memory content, at that address, is shif ted out on so, each bit being shifted out, at a max frequency fc, during the falling edge of sclk. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. once the a9 - a0 address reaches the last byte of the register (byte 3ffh), it will reset to 000h, the command is completed by driving cs# high. address a23 - a16 a15 - a 8 a 7 - a0 security registers 1 00h 01h byte address security registers 2 00h 02h byte addres s security registers 3 00h 03h byte address figure 26 . read security registers command sequence diagram write enable for volatile status register (50h) the non - volatile status register bits described on page 40 can also be written to as volatile bits. during power up reset, the non - volatile status register bits are copied to a volatile version of the status register that is used during device operation. this gives more flexibility to change the system configuration and memory protection schemes quickly without waiting for the typical non - volatile bit write cycles or affecting the endurance of the status register non - volatile bits. to write the volatile version of the status register bits, the write enable for volatile status register (50h ) command must be issued prior to each write status registers (01h) command. write enable for volatile status register command (figure 28 ) will not set the write enable latch (wel) bit, it is only valid for the next following write status registers command , to change the volatile status register bit values.
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 29 figure 27 . write enable for volatile status register power ? on timing table3. power - up timing and write inhibit threshold symbol parameter min max unit tvsl vcc(min) to cs# low 10 us tpuw time delay from vcc(min) to write instruction 1 10 ms vwi write inhibit voltage vcc(min) 1 2.5 v i nitial d elivery s tate the device is delivered with the memory array erased: all bits are set to 1(each byte contains ffh).the status register contains 00h (all status register bits are 0). d ata r etention a nd e ndurance parameter test condition min units minimum pattern data retention time 150 10 years 125 20 years erase / program endurance - 40 to 85 100k cycles
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 30 l atch u p c haracteris tics parameter min max input voltage respect to vss on i/o pins - 1.0v vcc+1.0 v vcc current - 100ma 100ma a bsolute m aximum r atings parameter value unit ambient operating temperature - 40 to 85 storage temperature - 55 to 125 output short circuit cur rent 200 ma applied input / output voltage - 0.5 to 4.0 v vcc - 0.5 to 4.0 v figure 28 . input test waveform and measurement level c apacitance m easurement c onditions symbol parameter min t yp max unit conditions cin input capacitance 6 pf vin=0v cout output capacitance 8 pf vout=0v c l load capacitance 30 pf input rise and fall time 5 ns input pause voltage 0.2vcc to 0.8vcc v input timing reference voltage 0.3vcc to 0.7vcc v output timing reference voltage 0.5vcc v maximum nega tive overshoot waveform maximum positive overshoot waveform
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 31 d c c haracteristic (t= - 40 ~85 , vcc=2.7~3.6v) symbol parameter test condition min typ max unit ili i nput l eakage cu rr ent 2 a ilo o u t put l eakage c u rr ent 2 a icc1 s t andby cu rr ent cs # = v c c, v i n =v cc or v s s 1 3 25 a icc2 deep power - down current cs # = v c c, v i n =v cc or v s s 2 5 a icc3 current: read single/dual/quad 1mhz sclk=0.1vcc/ 0.9vcc (1) 3/4/5 3.5/5/6 ma current: read single/dual/ quad 33 mhz 5/11/19 7.5/12/19.5 current: read single/dual/ quad 50 mhz 6.5/16/30 9.5/17/33 current: read single/dual/ quad 108 mhz 10/33/60 12/35/65 icc4 o pe r a ti ng cu rr ent ( p p ) cs # = v c c 1 5 ma icc5 o per a ti ng cu rr en t( w r s r) cs # = v c c 5 ma icc6 o pe r a ti ng cu rr ent ( s e) cs # = v c c 2 0 m a icc7 o per a ti ng cu rr ent ( be) cs # = v c c 2 0 ma icc 8 o pe r a ti ng cu rr ent ( c e) cs # = v c c 2 0 ma vil i nput l ow v o lt age - 0.5 0.2vcc v vih i nput h i gh v o lt age 0. 8 vcc vcc+0.4 v vol o u t put l ow v o lt age io l = 100a 0.4 v voh o u t put h i gh v o lt age ioh= - 100a vcc - 0.2 v note: icc3 is measured with ate loading
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 32 ac characteristics (t= - 40 ~85 , vcc=2.7~3.6v , cl=30pf) symbol parameter min typ max unit fc se ri al c l ock f r equency f o r: f a st_ re ad (0 b h ), d ual o u t pu t( 3 bh ) dc. 108 mhz fc1 se ri al c l ock f r equency f o r: d ual i / o (b bh ), q uad i / o (ebh ), q uad o u t pu t( 6b h ) dc. 108 mhz fr se ri al c l ock f r equency f o r: read (0 3 h ) dc. 55 mhz tclh se ri al c l ock h i gh t i m e 4 ns tcll se ri al c l ock l ow t i m e 4 ns tclch se ri a l c l ock r i se t i m e (s l ew ra t e) 0. 1 (2) v/ns tchcl se ri al c l ock f a l l t i m e (s l ew ra t e) 0.1 (2 v/ns tslch cs# ac ti v e se t up t i m e 5 ns tchsh cs# ac ti v e h o l d t i m e 5 ns t s hch cs# no ac ti v e se t up t i m e 5 ns tchsl cs# n ot ac ti v e h o l d t i m e 5 ns tshsl c s# h i gh t i m e r ead /writ e 20 ns tshqz o u t put d i s a b l e t i m e 6 ns tclqx o u t put h o l d t i m e 0 ns tdvch d a t a i n se t up t i m e 2 ns tchdx d a t a i n h o l d t i m e 2 ns thlch h o l d# l ow se t up t i m e (r e l a ti v e t o c l ock) 5 ns thhch h o l d# h i gh se t up t i m e (r e l a ti v e t o c l ock) 5 ns tchhl h o l d# h i gh h o l d t i m e (re l a t i v e t o c l ock) 5 ns tchhh h o l d# l ow h o l d t i m e (re l a ti v e t o c l ock) 5 ns thlqz h o l d# l ow t o h i g h - z o u t put 6 ns thhqx h o l d# l ow t o l o w - z o u t put 6 ns tclqv c l ock l ow t o o u t p ut v a li d 7 ns twhsl w rit e p ro t ect se t up t i m e befo r e cs# l ow 20 ns tshwl w rit e p ro t ect h o l d t i m e aft er cs# h i gh 100 ns tdp cs# h i gh t o d eep p o w e r - d o w n mode 0.1 s tres1 cs# h i gh t o s t an d by mode w it hout el e c tr on i c s i gna t u re read 3 s tres2 cs# h i gh t o s t an d by mode w it h el e c tr on i c s i gna t u r e read 1.5 s tsus cs# h i gh t o n ext co mma n d after sus p end 2 us tw w rit e s t a t us reg i s t er c y c l e t i m e 2 15 (1) ms tpp p a ge pro g ra m mi ng t i m e 0.7 2.4 ms tse sec t or era s e t i m e 100 300 ms tbe bl ock era s e t i m e ( 32k b y t e s / 64k b y t e s ) 0. 2 /0. 4 1/1.2 s tce ch i p e r a s e t i m e( ace25c 800 g ) 8 20 s
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 33 note: 1. tw can be up to 45ms at - 40 ? during the characterization of the current desi gn. it will be improved in the future design. 2. tested with clock frequency less than 50mhz. figure29 . serial input timing figure30 . output timing figure3 1 . hold tim in g
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 34 packaging information dip - 8 symbol mm i nch min nom max min nom max a 5.33 0.21 a1 0.38 0.015 a2 3.18 3.30 3.43 0.125 0.130 0.135 b 0.36 0.46 0.56 0.014 0.018 0.022 b1 1.14 1.52 1.78 0.045 0.060 0.070 c 0.20 0.25 0.36 0.008 0.010 0.014 d 9.02 9.27 10.16 0.355 0.365 0. 800 e 7.62 7.87 8.13 0.300 0.310 0.320 e1 6.22 6.35 6.48 0.245 0.250 0.255 e 2.54 0.10 eb 7.87 8.89 9.53 0.310 0.350 0.375 sl 2.92 3.30 3.81 0.115 0.130 0.15 s 0.76 1.14 1.52 0.030 0.045 0.060
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 35 packaging information sop - 8 (150mil) symbol mm i nch min nom max min nom max a 1.75 0.069 a1 0.10 0.15 0.20 0.004 0.006 0. 008 a2 1.35 1.45 1.55 0.053 0.057 0.061 b 0.36 0.41 0.51 0.014 0.016 0.020 c 0.15 0.20 0.25 0.006 0.008 0.010 d 4.77 4.90 5.03 0.188 0.193 0.198 e 5.80 5.99 6.2 0.228 0.236 0.244 e1 3.80 3.90 4.00 0.150 0.154 0.158 e 1.27 0.050 l 0.46 0.66 0.86 0.018 0.026 0.034 l1 0.85 1.05 1.25 0.033 0.041 0.049 s 0.41 0.54 0.67 0.016 0.021 0.026 0 5 8 0 5 8
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 36 packaging information sop - 8 (208mil) symbol mm i nch min nom max min nom max a 2.16 0.085 a1 0.05 0.15 0.25 0.002 0.006 0.010 a2 1.70 1.80 1.91 0.067 0.071 0.075 b 0.36 0.41 0.51 0.014 0.016 0.020 c 0.19 0.20 0.25 0.007 0.008 0.010 d 5.13 5.23 5.33 0.202 0.206 0.210 e 7.70 7.90 8.10 0.303 0.311 0.319 e1 5.18 5.28 5.38 0.204 0.208 0.212 e 1.27 0.050 l 0.50 0.65 0.80 0.020 0.026 0.031 l1 1.21 1.31 1.41 0.048 0.052 0.056 s 0.62 0.74 0.88 0.024 0.029 0.035 0 5 8 0 5 8
ACE25C800G uniform sector dual and quad serial flash ver 1. 6 37 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provide d in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/

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